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SQJQ402E MOSFET Transistor

The SQJQ402E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQJQ402E transistor as follows.

Circuit diagram symbol of the SQJQ402E transistor

SQJQ402E Transistor Specification

Transistor Code SQJQ402E
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERPAK 8X8L
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 200A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0017Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 1370pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 169nC

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