SQJ912EP MOSFET Transistor

The SQJ912EP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQJ912EP transistor as follows.

SQJ912EP Transistor Specification

Transistor Code		SQJ912EP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK-SO-8L
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		282pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		2.3V
Total Gate Charge		31.5nC

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