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SQJ465EP MOSFET Transistor

The SQJ465EP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQJ465EP transistor as follows.

Circuit diagram symbol of the SQJ465EP transistor

SQJ465EP Transistor Specification

Transistor Code SQJ465EP
Transistor Type MOSFET
Control Channel Type P-Channel
Package POWERPAK-SO-8L
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.085Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 13nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 26.5nC

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