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SQD50N06-07L MOSFET Transistor

The SQD50N06-07L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQD50N06-07L transistor as follows.

Circuit diagram symbol of the SQD50N06-07L transistor

SQD50N06-07L Transistor Specification

Transistor Code SQD50N06-07L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0076Ohm
Power Dissipation (Maximum) PD 136W
Drain-Source Capacitance 407pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 13nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 80nC

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