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SQD19P06-60L MOSFET Transistor

The SQD19P06-60L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQD19P06-60L transistor as follows.

Circuit diagram symbol of the SQD19P06-60L transistor

SQD19P06-60L Transistor Specification

Transistor Code SQD19P06-60L
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.055Ohm
Power Dissipation (Maximum) PD 46W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 9nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 27nC

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