SQD10N30-330H MOSFET Transistor

The SQD10N30-330H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQD10N30-330H transistor as follows.

SQD10N30-330H Transistor Specification

Transistor Code		SQD10N30-330H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.33Ohm
Power Dissipation (Maximum)	PD	107W
Drain-Source Capacitance		112pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		4.4V
Total Gate Charge		31nC

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