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SQD100N03-3M2L MOSFET Transistor

The SQD100N03-3M2L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQD100N03-3M2L transistor as follows.

Circuit diagram symbol of the SQD100N03-3M2L transistor

SQD100N03-3M2L Transistor Specification

Transistor Code SQD100N03-3M2L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0032Ohm
Power Dissipation (Maximum) PD 136W
Drain-Source Capacitance 921pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 77nC

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