SQ4435EY MOSFET Transistor

The SQ4435EY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ4435EY transistor as follows.

SQ4435EY Transistor Specification

Transistor Code		SQ4435EY
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	6.8W
Drain-Source Capacitance		392pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		38.3nC

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