SQ3481EV MOSFET Transistor

The SQ3481EV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ3481EV transistor as follows.

SQ3481EV Transistor Specification

Transistor Code		SQ3481EV
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP- 6
Transistor SMD Code		8E
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.043Ohm
Power Dissipation (Maximum)	PD	4W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		15.4nC

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