SQ3460EV MOSFET Transistor

The SQ3460EV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ3460EV transistor as follows.

SQ3460EV Transistor Specification

Transistor Code		SQ3460EV
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP- 6
Transistor SMD Code		8J
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		117pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		9.3nC

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