SQ3427EEV MOSFET Transistor

The SQ3427EEV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ3427EEV transistor as follows.

SQ3427EEV Transistor Specification

Transistor Code		SQ3427EEV
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP- 6
Transistor SMD Code		8D
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.082Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		20.8nC

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