SQ3410EV MOSFET Transistor

The SQ3410EV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ3410EV transistor as follows.

SQ3410EV Transistor Specification

Transistor Code		SQ3410EV
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP- 6
Transistor SMD Code		8G
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0175Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		175pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		14nC

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