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SQ2389ES MOSFET Transistor

The SQ2389ES is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ2389ES transistor as follows.

Circuit diagram symbol of the SQ2389ES transistor

SQ2389ES Transistor Specification

Transistor Code SQ2389ES
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-236
Transistor SMD Code 9A
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.094Ohm
Power Dissipation (Maximum) PD 3W
Drain-Source Capacitance 80pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 8.2nC

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