SQ2362ES MOSFET Transistor

The SQ2362ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ2362ES transistor as follows.

SQ2362ES Transistor Specification

Transistor Code		SQ2362ES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-236
Transistor SMD Code		8Z
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.068Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		7.6nC

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