SQ2351ES MOSFET Transistor

The SQ2351ES is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ2351ES transistor as follows.

SQ2351ES Transistor Specification

Transistor Code		SQ2351ES
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-236
Transistor SMD Code		8S
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.115Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		3.4nC

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