SQ2337ES MOSFET Transistor

The SQ2337ES is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ2337ES transistor as follows.

SQ2337ES Transistor Specification

Transistor Code		SQ2337ES
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-236
Transistor SMD Code		8Q
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.29Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		11.5nC

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