SQ2318ES MOSFET Transistor

The SQ2318ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ2318ES transistor as follows.

SQ2318ES Transistor Specification

Transistor Code		SQ2318ES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-236
Transistor SMD Code		8G
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		69pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		12.5nC

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