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SQ2318AES MOSFET Transistor

The SQ2318AES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ2318AES transistor as follows.

Circuit diagram symbol of the SQ2318AES transistor

SQ2318AES Transistor Specification

Transistor Code SQ2318AES
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-236
Transistor SMD Code 8Y
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.031Ohm
Power Dissipation (Maximum) PD 3W
Drain-Source Capacitance 79pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 8.4nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 8.7nC

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