SQ2315ES MOSFET Transistor

The SQ2315ES is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ2315ES transistor as follows.

SQ2315ES Transistor Specification

Transistor Code		SQ2315ES
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-236
Transistor SMD Code		8D
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		265pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		8.4nC

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