SQ2308CES MOSFET Transistor

The SQ2308CES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ2308CES transistor as follows.

SQ2308CES Transistor Specification

Transistor Code		SQ2308CES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-236
Transistor SMD Code		8X
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		22pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		3.5nC

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