SQ2308BES MOSFET Transistor

The SQ2308BES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ2308BES transistor as follows.

SQ2308BES Transistor Specification

Transistor Code		SQ2308BES
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-236
Transistor SMD Code		8U
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		23pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		4.5nC

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