SQ2303ES MOSFET Transistor

The SQ2303ES is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ2303ES transistor as follows.

SQ2303ES Transistor Specification

Transistor Code		SQ2303ES
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-236
Transistor SMD Code		8C
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		4.5nC

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