SQ2301ES MOSFET Transistor

The SQ2301ES is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ2301ES transistor as follows.

SQ2301ES Transistor Specification

Transistor Code		SQ2301ES
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-236
Transistor SMD Code		8A
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		5nC

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