SQ1912EEH MOSFET Transistor

The SQ1912EEH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ1912EEH transistor as follows.

SQ1912EEH Transistor Specification

Transistor Code		SQ1912EEH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-363
Transistor SMD Code		9M
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.28Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		23pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		51nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		1.5nC

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