SQ1421EEH MOSFET Transistor

The SQ1421EEH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQ1421EEH transistor as follows.

SQ1421EEH Transistor Specification

Transistor Code		SQ1421EEH
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-363
Transistor SMD Code		9B
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.29Ohm
Power Dissipation (Maximum)	PD	3.3W
Drain-Source Capacitance		36pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		3.6nC

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