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SPN80T10 MOSFET Transistor

The SPN80T10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SPN80T10 transistor as follows.

Circuit diagram symbol of the SPN80T10 transistor

SPN80T10 Transistor Specification

Transistor Code SPN80T10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220-3L
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 85A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0071Ohm
Power Dissipation (Maximum) PD 166W
Drain-Source Capacitance 550pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 58nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 115nC

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