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SPN10T10 MOSFET Transistor

The SPN10T10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SPN10T10 transistor as follows.

Circuit diagram symbol of the SPN10T10 transistor

SPN10T10 Transistor Specification

Transistor Code SPN10T10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220_TO-220F
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.16Ohm
Power Dissipation (Maximum) PD 28W
Drain-Source Capacitance 56pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 10nC

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