SPD35N10 MOSFET Transistor

The SPD35N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SPD35N10 transistor as follows.

SPD35N10 Transistor Specification

Transistor Code		SPD35N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Transistor SMD Code		35N10
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.044Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		245pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		63nS

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