SPD04N60C3 MOSFET Transistor

The SPD04N60C3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SPD04N60C3 transistor as follows.

SPD04N60C3 Transistor Specification

Transistor Code		SPD04N60C3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_TO252
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.9V
Total Gate Charge		19nC

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