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SPC6601 MOSFET Transistor

The SPC6601 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SPC6601 transistor as follows.

Circuit diagram symbol of the SPC6601 transistor

SPC6601 Transistor Specification

Transistor Code SPC6601
Transistor Type MOSFET
Control Channel Type NP-Channel
Package TSOP- 6P
Transistor SMD Code 01YW
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 2.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.068Ohm
Power Dissipation (Maximum) PD 1.15W
Operating Junction Temperature (Maximum) 150°C
Rise Time 2.5nS
Gate-Threshold Voltage (Maximum) 1.6V
Total Gate Charge 4.2nC

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