SPB80N08S2L MOSFET Transistor

The SPB80N08S2L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SPB80N08S2L transistor as follows.

SPB80N08S2L Transistor Specification

Transistor Code		SPB80N08S2L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Transistor SMD Code		2N08L07
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0071Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		993pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		81nS

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