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SPB70N10L MOSFET Transistor

The SPB70N10L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SPB70N10L transistor as follows.

Circuit diagram symbol of the SPB70N10L transistor

SPB70N10L Transistor Specification

Transistor Code SPB70N10L
Transistor Type MOSFET
Control Channel Type N-Channel
Package PTO263
Transistor SMD Code 70N10L
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 70A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.016Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 640pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 2V

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