SPB17N80C3 MOSFET Transistor

The SPB17N80C3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SPB17N80C3 transistor as follows.

SPB17N80C3 Transistor Specification

Transistor Code		SPB17N80C3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	800V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.29Ohm
Power Dissipation (Maximum)	PD	227W
Total Gate Charge		88nC

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