SPB100N08S2-07 MOSFET Transistor

The SPB100N08S2-07 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SPB100N08S2-07 transistor as follows.

SPB100N08S2-07 Transistor Specification

Transistor Code		SPB100N08S2-07
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Transistor SMD Code		PN0807
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0071Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1080pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		4V

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