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SP8010E MOSFET Transistor

The SP8010E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SP8010E transistor as follows.

Circuit diagram symbol of the SP8010E transistor

SP8010E Transistor Specification

Transistor Code SP8010E
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSON3.3X3.3
Drain-Source Voltage (Maximum) VDS 24V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 26A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0054Ohm
Power Dissipation (Maximum) PD 1.67W
Total Gate Charge 27nC

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