SP8009E MOSFET Transistor

The SP8009E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SP8009E transistor as follows.

SP8009E Transistor Specification

Transistor Code		SP8009E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSON3.3X3.3
Drain-Source Voltage (Maximum)	VDS	33V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	1.67W
Drain-Source Capacitance		362pF
Total Gate Charge		333nC

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