SNN5010D MOSFET Transistor

The SNN5010D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SNN5010D transistor as follows.

SNN5010D Transistor Specification

Transistor Code		SNN5010D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		640pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Total Gate Charge		75nC

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