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SML801R4BN MOSFET Transistor

The SML801R4BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML801R4BN transistor as follows.

Circuit diagram symbol of the SML801R4BN transistor

SML801R4BN Transistor Specification

Transistor Code SML801R4BN
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 800V
Drain Current (Maximum) ID 8.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 240W
Drain-Source Capacitance 1800pF
Operating Junction Temperature (Maximum) 150°C

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