SML801R2BN MOSFET Transistor

The SML801R2BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML801R2BN transistor as follows.

SML801R2BN Transistor Specification

Transistor Code		SML801R2BN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	800V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	240W
Drain-Source Capacitance		1800pF
Operating Junction Temperature (Maximum)		150°C

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