SML601R6BN MOSFET Transistor

The SML601R6BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML601R6BN transistor as follows.

SML601R6BN Transistor Specification

Transistor Code		SML601R6BN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.6Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C

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