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SML5030BN MOSFET Transistor

The SML5030BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML5030BN transistor as follows.

Circuit diagram symbol of the SML5030BN transistor

SML5030BN Transistor Specification

Transistor Code SML5030BN
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 500V
Drain Current (Maximum) ID 21A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 310W
Drain-Source Capacitance 2600pF
Operating Junction Temperature (Maximum) 175°C

SML5030BN MOSFET Transistor Overview

The SML5030BN is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO247 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the SML5030BN MOSFET

Followings are the key electrical characteristics of the SML5030BN MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SML5030BN MOSFET transistor is 500V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SML5030BN MOSFET transistor is 21A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SML5030BN MOSFET transistor when the transistor is fully turned on is 0.3 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SML5030BN MOSFET transistor can comfortably transfer into heat without breaking is 310W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the SML5030BN MOSFET transistor is 2600pF. This value influences to the switching speed of the SML5030BN MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SML5030BN MOSFET transistor is switched on is . This is the rate at which SML5030BN MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SML5030BN MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SML5030BN MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the SML5030BN MOSFET transistor. You can download the official SML5030BN MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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