SML501R1BN MOSFET Transistor

The SML501R1BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML501R1BN transistor as follows.

SML501R1BN Transistor Specification

Transistor Code		SML501R1BN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	500V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C

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