SML4080GN MOSFET Transistor

The SML4080GN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML4080GN transistor as follows.

SML4080GN Transistor Specification

Transistor Code		SML4080GN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	400V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C

SML4080GN MOSFET Transistor Overview

The SML4080GN is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO3 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the SML4080GN MOSFET

Followings are the key electrical characteristics of the SML4080GN MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in SML4080GN MOSFET transistor is 400V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the SML4080GN MOSFET transistor is 7.5A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of SML4080GN MOSFET transistor when the transistor is fully turned on is 0.8 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the SML4080GN MOSFET transistor can comfortably transfer into heat without breaking is 100W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Drain-Source Capacitance

The capacitance between drain and source of the SML4080GN MOSFET transistor is 950pF. This value influences to the switching speed of the SML4080GN MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

• Rise Time

The time that the drain current or output voltage increases between low to high when the SML4080GN MOSFET transistor is switched on is . This is the rate at which SML4080GN MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SML4080GN MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of SML4080GN MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SML4080GN MOSFET transistor. You can download the official SML4080GN MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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