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SML2005SMD1 MOSFET Transistor

The SML2005SMD1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML2005SMD1 transistor as follows.

Circuit diagram symbol of the SML2005SMD1 transistor

SML2005SMD1 Transistor Specification

Transistor Code SML2005SMD1
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-276AB
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 48A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 208W
Drain-Source Capacitance 110pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 105nC

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