SML1310IGF MOSFET Transistor

The SML1310IGF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML1310IGF transistor as follows.

SML1310IGF Transistor Specification

Transistor Code		SML1310IGF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.44Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		463pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		85nS
Gate-Threshold Voltage (Maximum)		4V

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