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SML120B10 MOSFET Transistor

The SML120B10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML120B10 transistor as follows.

Circuit diagram symbol of the SML120B10 transistor

SML120B10 Transistor Specification

Transistor Code SML120B10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 1200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 370W
Drain-Source Capacitance 3700pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 190nC

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