SML1004R2GXN MOSFET Transistor

The SML1004R2GXN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML1004R2GXN transistor as follows.

SML1004R2GXN Transistor Specification

Transistor Code		SML1004R2GXN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.2Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		35nC

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