SML1002R4BN MOSFET Transistor

The SML1002R4BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML1002R4BN transistor as follows.

SML1002R4BN Transistor Specification

Transistor Code		SML1002R4BN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1000V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.4Ohm
Power Dissipation (Maximum)	PD	240W
Drain-Source Capacitance		1800pF
Operating Junction Temperature (Maximum)		150°C

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