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SML1001RHN MOSFET Transistor

The SML1001RHN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML1001RHN transistor as follows.

Circuit diagram symbol of the SML1001RHN transistor

SML1001RHN Transistor Specification

Transistor Code SML1001RHN
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO258
Drain-Source Voltage (Maximum) VDS 1000V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 2950pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 90nC

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