SML1001RBN MOSFET Transistor

The SML1001RBN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML1001RBN transistor as follows.

SML1001RBN Transistor Specification

Transistor Code		SML1001RBN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1000V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	310W
Drain-Source Capacitance		2950pF
Operating Junction Temperature (Maximum)		150°C

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